savantic semiconductor product specification silicon pnp power transistors 2SB1230 description with to-3pn package wide area of safe operation complement to type 2sd1840 low collector saturation voltage applications motor drivers,relay drivers,converters and other general high-current switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -110 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -6 v i c collector current -15 a i cm collector current -peak -25 a i b base current -5 a t a =25 3.0 p c collector power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1230 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-5ma;r be = < -100 v v (br)cbo collector-base breakdown voltage i c =-1ma; i e =0 -110 v v (br)ebo emitter-base breakdown voltage i e =-1ma; i c =0 -6 v v cesat collector-emitter saturation voltage i c =-6a; i b =-0.6a -0.8 v v be sat base-emitter saturation voltage i c =-6a; i b =-0.6a -1.5 v i cbo collector cut-off current v cb =-100v; i e =0 -100 a i ebo emitter cut-off current v eb =-5v; i c =0 -100 a h fe-1 dc current gain i c =-1.5a ; v ce =-2v 50 140 h fe-2 dc current gain i c =-6a ; v ce =-2v 20 h fe-1 classifications p q 50-100 70-140
savantic semiconductor product specification 3 silicon pnp power transistors 2SB1230 package outline fig.2 outline dimensions
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